GaSb/AlSb/GaAs应变层结构的分子束外延生长

本文以反射式高能电子衍射(RHEED)和其强度振荡为监测手段,在半绝缘GaAs衬底上成功地生长GaSb/AlSb/GaAs应变层结构,RHEED图样表明,GaSb正常生长时为Sb稳定的C(2×6)结构,AlSb为稳定的(1×3)结构,作者观察并记录GaSb,AlSb生长时的RHEED强度振荡,并利用它成功地生长10个周期的GaSb/AlSb超晶格,透射电子显微镜照片显示界面平整、清晰,采用较厚的AlSb过渡层及适当的生长条件,可在半绝缘GaAs衬底上生长出质量好的GaSb外延层,其X射线双晶衍射半峰宽小于 关键词：

THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE

By means of monitoring with the reflection high energy electron diffraction (RHEED) -and its intensity oscillations, the GaSb/AlSb/GaAs strained layer heterostructures have been suc-cessfully grown on semi-insulating (100) GaAs substrates by molecular beam epitaxy (MBE) The RHEED patterns show that the GaSb surface grown under Sb-stabilized condition has C (2×6) structure and the AlSb surface has (1×3) Sb structure. We observed and recorded the RHEED intensity oscillations during the growth of GaSb and AlSb. Using the information provided by the RHEED intensity oscillations, we successfully prepared a GaSb/AlSb super-lattice with 10 periods. The transmission electron micrograph shows the interfaces in the su-perlattice are sharp and planar. If the AlSb buffer layer is thick enough under a proper growth condition, a high-quality GaSb epitaxy will be grown on SI GaAs substrate. The full width at half maximun (FWHM) of the peak corresponding to the GaSb epilayer in double-crystal X-ray diffraction rocking curve is less than 300 seconds. Undoped GaSb is p-type with carrier concentration of 2.12×10¹⁶ cm^-3 and mobility of 664cm²/V·s at room temperature.