| 环栅肖特基势垒金属氧化物半导体场效应管漏致势垒降低效应研究 |
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| 引用本文： | 许立军,张鹤鸣.环栅肖特基势垒金属氧化物半导体场效应管漏致势垒降低效应研究[J].物理学报,2013,62(10):108502-108502. |
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| 作者姓名： | 许立军 张鹤鸣 |
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| 作者单位： | 西安电子科技大学微电子学院, 宽禁带半导体材料与器件重点实验室, 西安 710071 |
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| 摘 要： | 结合环栅肖特基势垒金属氧化物半导体场效应管(MOSFET)结构, 通过求解圆柱坐标系下的二维泊松方程得到了表面势分布, 并据此建立了适用于低漏电压下的环栅肖特基势垒NMOSFET阈值电压模型.根据计算结果, 分析了漏电压、沟道半径和沟道长度对阈值电压和漏致势垒降低的影响, 对环栅肖特基势垒MOSFET器件以及电路设计具有一定的参考价值.
关键词：
环栅肖特基势垒金属氧化物半导体场效应管
二维泊松方程
阈值电压模型
漏致势垒降低
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| 关 键 词： | 环栅肖特基势垒金属氧化物半导体场效应管 二维泊松方程 阈值电压模型 漏致势垒降低 |
| 收稿时间： | 2012-12-13 |
Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor |
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| Xu Li-Jun,Zhang He-Ming.Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor[J].Acta Physica Sinica,2013,62(10):108502-108502. |
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| Authors: | Xu Li-Jun Zhang He-Ming |
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| Abstract: | Based on surrounding-gate schottky barrier metal-oxide semiconductor field transistor (MOSFET) structure, the distribution of surface potential is obtained by solving two-dimensional Poisson equation in cylindrical coordinates, and the threshold voltage model of surrounding-gate schottky barrier NMOSFET which is applicable to the low voltage of drain is built. According to the calculation results, the dependences of threshold voltage and drain-induced barrier-lowering on voltage of drain, channel radius and channel length are studied in detail, which can provide some reference for the design of surrounding-gate schottky barrier MOSFET device and circuit.
Keywords：
surrounding-gate schottky barrier metal-oxide semiconductor field transistor
two-dimensional Poisson equation
threshold voltage model
drain-induced barrier-lowering |
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| Keywords: | surrounding-gate schottky barrier metal-oxide semiconductor field transistor two-dimensional Poisson equation threshold voltage model drain-induced barrier-lowering |
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