| 图形衬底量子线生长制备与荧光特性研究 |
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| 引用本文： | 王秀平,杨晓红,韩勤,鞠研玲,杜云,朱彬,王杰,倪海桥,贺继方,王国伟,牛智川.图形衬底量子线生长制备与荧光特性研究[J].物理学报,2011,60(2):20703-020703. |
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| 作者姓名： | 王秀平 杨晓红 韩勤 鞠研玲 杜云 朱彬 王杰 倪海桥 贺继方 王国伟 牛智川 |
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| 作者单位： | (1)中国科学院半导体研究所半导体超晶格国家重点实验室,北京 100083; (2)中国科学院半导体研究所集成光电子学国家重点实验室,北京 100083 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:2007CB936304,2006CB302802)、国家高技术研究发展计划(批准号:2007AA03Z421,2009AA03Z404)和国家自然科学基金(批准号:60876093)资助的课题. |
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| 摘 要： | 报道了在V型槽图形衬底上利用分子束外延技术外延生长的GaAs/AlGaAs量子线.外延截面在扫描电子显微镜下可以看到在V型槽底部形成了弯月型量子线结构,量子线尺寸约为底边60 nm高14 nm的近三角形.低温87 K下光致发光谱测试在793.7和799.5 nm处出现峰值,验证了量子线的存在.理论近似计算结果显示,相比等宽度量子阱有8 meV的蓝移正是由于横向量子限制引起的.
关键词：
V型槽图形衬底
量子线
GaAs
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| 关 键 词： | V型槽图形衬底 量子线 GaAs |
| 收稿时间： | 2010-04-12 |
Preparation and photoluminescence study of patterned substrate quantum wires |
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| Wang Xiu-Ping,Yang Xiao-Hong,Han Qin,Ju Yan-Ling,Du Yun,Zhu Bin,Wang Jie,Ni Hai-Qiao,He Ji-Fang,Wang Guo-Wei,Niu Zhi-Chuan.Preparation and photoluminescence study of patterned substrate quantum wires[J].Acta Physica Sinica,2011,60(2):20703-020703. |
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| Authors: | Wang Xiu-Ping Yang Xiao-Hong Han Qin Ju Yan-Ling Du Yun Zhu Bin Wang Jie Ni Hai-Qiao He Ji-Fang Wang Guo-Wei Niu Zhi-Chuan |
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| Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 China;State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 China |
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| Abstract: | GaAs /AlGaAs quantum wires grown by molecular beam epitaxy on a V-groove patterned substrate was described. The cross section of scan electron microscopy (SEM) image shows that crescent-type quantum wire were formed at the V groove bottom,which is a triangle of about 60 nm in width and 14 nm in height. Two peaks at 793. 7 nm and 799. 5 nm of photoluminescence spectrum at 87 K verified the existence of quantum wires. Theoretical calculation gives 8 meV blue shift,which is proved to be casued by lateral confi... |
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| Keywords: | V-groove substrate quantum wires GaAs |
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