首页 | 本学科首页   官方微博 | 高级检索  
     检索      

新型全方位反射铝镓铟磷薄膜发光二极管
引用本文:张剑铭,邹德恕,刘思南,徐晨,沈光地.新型全方位反射铝镓铟磷薄膜发光二极管[J].物理学报,2007,56(5):2905-2909.
作者姓名:张剑铭  邹德恕  刘思南  徐晨  沈光地
作者单位:北京工业大学北京市光电子技术实验室,北京 100022
基金项目:北京市属市管高等学校人才强教计划;北京市科委高效高亮度单芯片半导体照明器件的研发与产业化课题
摘    要:提出了一种新型全方位反射铝镓铟磷(AlGaInP)薄膜发光二极管(LED)的结构和制作工艺,在这个结构里应用了低折射率的介质和高反射率的金属联合作为反光镜.用金锡合金(80Au20Sn,重量比)作为焊料把带有反光镜的AlGaInP LED外延片倒装键合到GaAs基板上(RS-LED),去掉外延片GaAs衬底,把被GaAS衬底吸收的光反射出去.通过与常规AlGaInP 吸收衬底LEDs(AS-LED)和带有DBR的AlGaInP 吸收衬底LEDs(AS-LED(DBR))电、光特性的比较,证明新型全方位反射AlGaInP薄膜LED结构能极大提高亮度和效率.正向电流20mA时,RS-LED的光输出功率和流明效率分别是AS-LED的3.2倍和2.2倍,是AS-LED(DBR)的2倍和1.5倍.RS-LED(20mA下峰值波长627nm)的轴向光强达到194.3mcd,是AS-LED(20mA下峰值波长624nm)轴向光强的2.8倍,是AS-LED(DBR)(20mA下峰值波长623nm)轴向光强的1.6倍. 关键词: 铝镓铟磷 薄膜发光管 全方位反射镜 发光强度

关 键 词:铝镓铟磷  薄膜发光管  全方位反射镜  发光强度
文章编号:1000-3290/2007/56(05)/2905-05
收稿时间:2006-07-15
修稿时间:07 15 2006 12:00AM

A novel AlGaInP thin-film light emitting diode with omni directional reflector
Zhang Jian-Ming,Zou De-Shu,Liu Si-Nan,Xu Chen,Shen Guang-Di.A novel AlGaInP thin-film light emitting diode with omni directional reflector[J].Acta Physica Sinica,2007,56(5):2905-2909.
Authors:Zhang Jian-Ming  Zou De-Shu  Liu Si-Nan  Xu Chen  Shen Guang-Di
Institution:Beijing Optoelectronic Technology Laboratory, Beifing University of Technology, Beijing 100022, China
Abstract:A novel AlGaInP thin-film light emitting diode (LED) with omni directional reflector structure was proposed, the corresponding fabrication process was developed. This reflector is realized by the combination of a low-refractive-index dielectric layer and a high reflectivity metal layer. The AlGaInP LED layers with dielectric-metal reflector is invertedly bonded to the GaAs submount by using 80Au-20Sn (wt%) alloy as a solder (Reflector-Submount, RS-LED), and then GaAs substrate is removed. The light that would otherwise be absorbed by the GaAs substrate is reflected by the high reflectivity dielectric-metal reflector. The optical and electrical characteristics of the RS-LED are presented and compared with the conventional AlGaInP absorbing substrate (AS) LED and AlGaInP absorbing substrate LED with distributed Bragg reflectors (DBR). A great improvement in the brightness and efficiency is observed. It is shown that the light output and lumen efficiency from the RS-LED at forward current 20mA exceed those of AS-LED by about a factor of 2.2 and 1.2, respectively, and ~2× the light output of AS-LED (DBR) and ~1.5× the lumen efficiency of AS-LED (DBR) were achieved. 194.3mcd luminous intensity from the RS-LED (at 20mA, peak wavelength 627nm) could be obtained under 20mA injection, which is 2.8 and 1.6 times higher in luminous intensity than the AS-LED (at 20mA, peak wavelength 624nm) and AS-LED(DBR) (at 20mA, peak wavelength 623nm), respectively.
Keywords:AlGaInP  thin-film LED  omni directional reflector  luminous intensity
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《物理学报》浏览原始摘要信息
点击此处可从《物理学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号