| MOCVD法制备的p-ZnO/n-SiC 异质结器件及其电致发光性能 |
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| 引用本文： | 史志锋,伍斌,蔡旭浦,张金香,王辉,王瑾,夏晓川,董鑫,张宝林,杜国同.MOCVD法制备的p-ZnO/n-SiC 异质结器件及其电致发光性能[J].发光学报,2012,33(5):514-518. |
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| 作者姓名： | 史志锋 伍斌 蔡旭浦 张金香 王辉 王瑾 夏晓川 董鑫 张宝林 杜国同 |
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| 作者单位： | 1. 集成光电子国家重点联合实验室 吉林大学电子科学与工程学院, 吉林 长春 130012;
2. 大连理工大学 物理与光电工程学院, 辽宁 大连 116023 |
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| 基金项目： | 国家“973”计划，国家自然科学基金 |
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| 摘 要： | 采用光辅助金属有机化学汽相沉积(PA-MOCVD)法在n-SiC(6H)衬底上制备出As掺杂的p型ZnO薄膜,并制备出相应的p-ZnO:As/n-SiC异质结器件。X射线衍射(XRD)和光致发光(PL)测试表明,ZnO薄膜具有较好的结构和光学特性。电流-电压(I-V)测试结果表明,该型异质结器件具有良好的整流特性,开启电压为5.0 V,反向击穿电压约为-13 V。正向偏压下,器件的电致发光(EL)谱表现出两个分别位于紫外和可见光区域的发光峰,通过和ZnO、SiC的PL谱对照,证实异质结器件的发光峰来源于ZnO侧的辐射复合。
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| 关 键 词： | As掺杂 p-ZnO/n-SiC 电致发光 金属有机化学汽相沉积 |
| 收稿时间： | 2012/2/15 |
Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD |
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| SHI Zhi-feng
,
WU Bin
,
CAI Xu-pu
,
ZHANG Jin-xiang
,
WANG Hui
,
WANG Jin
,
XIA Xiao-chuan
,
DONG Xin
,
ZHANG Bao-lin
,
DU Guo-tong.Fabrication and Electroluminescent Properties of p-ZnO/n-SiC Heterojunction Device by MOCVD[J].Chinese Journal of Luminescence,2012,33(5):514-518. |
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| Authors: | SHI Zhi-feng WU Bin CAI Xu-pu ZHANG Jin-xiang WANG Hui WANG Jin XIA Xiao-chuan DONG Xin ZHANG Bao-lin DU Guo-tong |
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| Institution: | 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;
2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, China |
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| Abstract: | As-doped p-ZnO films were grown by photo-assisted metal-organic chemical vapor deposition(PA-MOCVD) system on n-SiC(6H) substrate and the p-ZnO/n-SiC heterojunction device was fabricated.The structural and optical properties of the As-doped ZnO film have been studied by X-ray diffraction(XRD) and photoluminescence(PL) measurements.A typical p-n junction rectification behavior was acquired with a turn-on voltage of 5.0 V and a reverse breakdown voltage of about-13 V.Under forward bias,two obvious emission peaks at ultraviolet(UV) and visible regions were detected.By comparing with the PL spectra of ZnO and SiC,the origin of the UV and visible emission peaks was confirmed from the radiative recombination of ZnO side. |
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| Keywords: | As-doping p-ZnO/n-SiC EL MOCVD |
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