| Ga掺入对立方相MgZnO薄膜晶体结构的影响 |
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| 引用本文： | 李超群,张振中,陈洪宇,谢修华,申德振.Ga掺入对立方相MgZnO薄膜晶体结构的影响[J].发光学报,2014,35(8):922-925. |
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| 作者姓名： | 李超群 张振中 陈洪宇 谢修华 申德振 |
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| 作者单位： | 1. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033;
2. 中国科学院大学, 北京 100049 |
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| 基金项目： | 国家自然科学基金(21100146, 61376054); 国家“973计划”(2011CB302006)资助项目 |
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| 摘 要： | 采用金属有机物化学气相沉积方法生长了立方相Mg0.56Zn0.44O：Ga薄膜，Ga在MgZnO中的摩尔分数为2.8%~4.5%。低掺杂水平的MgZnO可以保持其良好的结晶特性。随着Ga元素的摩尔分数升高至3.1%、3.3%与4.5%，立方相MgZnO中分别出现了Ga2O3、ZnO与ZnGa2O4分相。其中，Ga2O3与ZnGa2O4相的出现是由于Ga的掺杂使这两相在MgZnO基质中饱和析出，而ZnO分相被归因于Ga的引入部分破坏了立方MgZnO的亚稳态结构状态，使组分原本就处于分相区的立方MgZnO出现相分离。
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| 关 键 词： | 立方相MgZnO Ga掺杂 晶体结构 相分离 |
| 收稿时间： | 2014/4/8 |
Study of Ga-doping Effect on The Structure of Cubic MgZnO |
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| LI Chao-qun,ZHANG Zhen-zhong,CHEN Hong-yu,XIE Xiu-hua,SHEN De-zhen.Study of Ga-doping Effect on The Structure of Cubic MgZnO[J].Chinese Journal of Luminescence,2014,35(8):922-925. |
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| Authors: | LI Chao-qun ZHANG Zhen-zhong CHEN Hong-yu XIE Xiu-hua SHEN De-zhen |
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| Institution: | 1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | The influence of gallium (Ga) doping on the structure of cubic MgZnO was studied by changing the doping level. Cubic Mg0.56Zn0.44O films with various Ga-doping levels were grown by metal-organic chemical vapor deposition method. The mole fraction of Ga in this experiment was 0, 2.8%, 3.1%, 3.3%, and 4.5% in MgZnO. Ga2O3, ZnO and ZnGa2O4 phase separations took place subsequently with Ga mole fraction increasing to 3.1%, 3.3%, and 4.5%. The Ga2O3 and ZnGa2O4 phase separations can be attributed to their solubilities in MgZnO, and the formation of ZnO comes from the introduction of Ga which breaks the metastable structure of cubic MgZnO. |
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| Keywords: | cubic MgZnO Ga doped crystal structure phase separation |
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