| 采用N2-RF等离子体氮化GaAs(001) |
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| 引用本文： | 秦志新,陈志忠,周建辉,张国义.采用N2-RF等离子体氮化GaAs(001)[J].发光学报,2002,23(2):114-118. |
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| 作者姓名： | 秦志新 陈志忠 周建辉 张国义 |
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| 作者单位： | 北京大学物理系, 介观物理与人工微结构国家重点实验室, 北京100871 |
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| 基金项目： | 国家自然科学基金，69876002， |
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| 摘 要： | 研究了在MBE系统中,GaAs(001)表面的氮化过程。GaAs(001)表面直接和间接地暴露在等离子体激发的N2气流下。两种氮化过程显示了完全不同的表面氮化结果。在打开N2发生器挡板的情况下,氮化导致GaAs(001)表面损伤,并且形成多晶结构。当增加N2气压时,损伤变得更严重。但是,在关闭N2发生器挡板的情况下,在500℃下,经过氮化将观察到(3×3)再构的RHEED花样,表面仍保持原子级的平整度。上述结果表明,不开N2发生器挡板,低温(500℃下)氮化将在GaN外延生长之前形成平整的薄层c-GaN。
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| 关 键 词： | GaN 氮化 分子束外延 |
| 收稿时间： | 2001-09-17 |
Nitridation of GaAs(001) Using N2-RF Plasma |
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| Abstract.Nitridation of GaAs(001) Using N2-RF Plasma[J].Chinese Journal of Luminescence,2002,23(2):114-118. |
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| Authors: | Abstract |
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| Institution: | Department of Physics, Mesoscopic Physics National Key Laboratory, Peking University, Beijing 100871, China |
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| Abstract: | The nitridation process of GaAs(001) surface was performed by exposing the surface of GaAs(001) to the flux of plasma-excited N2 gas directly and indirectly in MBE system. Two processes show completely different effect on the GaAs surface. The nitridation performed by opening N2 cell shutter resulted in deterioration of the GaAs(001) surface and formation of polycrystalline structure. With increasing of the N2 pressure during the nitridation , the deterioration became serious. However, for the surface nitrided with the closed N2 cell shutter, after nitridation process at 500℃, the(3 × 3) RHEED pattern was observed and the surface still kept atomically flat. Our results indicate that the nitridation (without opening N2 shutter) of GaAs(001 ) surface at low temperature (500℃) is suitable for the formation of thin c-GaN layer with flat surface before normal GaN epilayer growth. |
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| Keywords: | GaN nitridation MBE |
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