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| 以ILTO为阳极的高效有机电致发光器件 | |
| 引用本文： | 田苗苗,李春杰,贺小光,于立军,范翊,王宁.以ILTO为阳极的高效有机电致发光器件[J].发光学报,2012,33(11):1252-1257. |
| 作者姓名： | 田苗苗 李春杰 贺小光 于立军 范翊 王宁 |
| 作者单位： | 田苗苗:长春师范学院 物理学院, 吉林 长春 130032中国科学院长春应用化学研究所 高分子物理与化学国家重点实验室, 吉林 长春 130022 李春杰:长春师范学院 物理学院, 吉林 长春 130032 贺小光:长春师范学院 物理学院, 吉林 长春 130032 于立军:长春师范学院 物理学院, 吉林 长春 130032 范翊:发光学与应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033 王宁:中国科学院长春应用化学研究所 高分子复合材料工程实验室, 吉林 长春 130022 |
| 基金项目： | 国家自然科学基金(21104077); 吉林省教育厅“十二五”科学技术研究项目(高效率有机太阳能电池研究); 长春师范学院自然科学基金(2010第009号)资助项目 |
| 摘 要： | 以高功函数的掺杂钛酸镧的氧化铟薄膜(ILTO)及氧化铟锡(ITO)作为阳极,制备了Glass/anode/NPB/Alq3/LiF/Al结构的有机电致发光器件。得益于ILTO较好的掺杂性、低的表面粗糙度、高的可见光透过率以及高的有效功函数,以ILTO为阳极的有机电致发光器件的开路电压得到降低,最高亮度、电流效率、功率效率以及外量子效率均获得了成倍的提高。研究结果表明,ILTO是一种潜在的光学窗口材料,有望在各种光电器件中得到广泛的应用。 |
| 关 键 词： | 功函数 掺杂 透明导电薄膜 有机电致发光器件 |
| 收稿时间： | 2012/7/29 |
High-performance Organic Light-emitting Diodes Based on ILTO Thin Film |
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| TIAN Miao-miao,LI Chun-jie,HE Xiao-guang,YU Li-jun,FAN Yi,WANG Ning.High-performance Organic Light-emitting Diodes Based on ILTO Thin Film[J].Chinese Journal of Luminescence,2012,33(11):1252-1257. | |
| Authors: | TIAN Miao-miao LI Chun-jie HE Xiao-guang YU Li-jun FAN Yi WANG Ning |
| Institution: | 1.College of Physics,Changchun Normal University,Changchun 130022,China; 2.State Key Laboratory of Polymer Physics and Chemistry,Changchun Institute of Applied Chemistry, Chinese Academy of Sciences,Changchun 130022,China; 3.State Key Laboratory of Luminescence and Application,Changchun Institute of Optics,Fine Mechanics and Physics, Chinese Academy of Sciences,Changchun 130033,China; 4.Polymer Composites Engineering Laboratory,Changchun Institute of Applied Chemistry, Chinese Academy of Sciences,Changchun 130022,China) |
| Abstract: | OLEDs were fabricated with a structure of anode (ILTO or ITO)/NPB (70 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (100 nm). NPB and tris(8-hydroxyquinoline) aluminum (Alq3) were used as hole transport layer and light emitting layer, respectively. A buffer layer of lithium fluoride (LiF) capped with aluminum (Al) was used as a cathode. Comparing with ITO-anode device, the luminance, current efficiency, power efficiency, and external quantum efficiency (EQE) are obviously enhanced in ILTO-anode device. Simultaneously, the turn-on voltage (2.1 V) is decreased in combination with a better rectifying behavior. The significant improvement in the EL performance indicates that the high-work-function ILTO anode can not only lower the hole-injection barrier, but also leads to a better charge balance in OLEDs. The effects of high work function afford more opportunities to develop and optimize the performance of organic photoelectric devices, and facilitate the fabrication process of devices. |
| Keywords: | work function doped transparent conducting oxides OLED |
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