| UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE |
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| 作者姓名： | 杨青 |
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| 作者单位： | Department of |
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| 基金项目： | Project supported by the National Natural Science Fbundation and the Natural Science Foundation of Shandong Province |
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| 摘 要： | The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind
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UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE |
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| Yang Qing.UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE[J].Numerical Mathematics A Journal of Chinese Universities English Series,2003,12(2). |
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| Authors: | Yang Qing |
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| Institution: | Department of Mathematics,Shandong Normal University,Jinan 250014,PRC/School of Mathematics and System Science,Shandong University,Jinan 250100,PRC |
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| Abstract: | The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind volume element schemes for the two concentration equations. Error estimates in L2 norm for our numerical schemes are derived. |
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| Keywords: | semiconductor initial boundary value problem finite volume element error estimates |
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