| Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium |
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| 作者姓名： | 韩德栋 康晋锋 刘晓彦 孙雷 罗浩 韩汝琦 |
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| 作者单位： | Institute of Microelectronics, Peking University,Beijing 100871, China;Institute of Microelectronics, Peking University,Beijing 100871, China;Institute of Microelectronics, Peking University,Beijing 100871, China;Institute of Microelectronics, Peking University,Beijing 100871, China;Institute of Microelectronics, Peking University,Beijing 100871, China;Institute of Microelectronics, Peking University,Beijing 100871, China |
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| 基金项目： | Project supported by the National Natural Science Foundation
of China (Grant
No~90307006), by the National High Tech.
Development Program of China (Grant
No~2003AA1Z1370), and by the State Key Development Program for Basic
Research of China (Grant No~G200 |
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| 摘 要： | This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.
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| 关 键 词： | 锗 氧化铪 钾 栅极介质 制作 反应溅射法 炉内退火 |
| 收稿时间： | 2006-03-28 |
| 修稿时间： | 2006-03-282006-07-21 |
Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium |
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| Han De-Dong,Kang Jin-Feng,Liu Xiao-Yan,Sun Lei,Luo Hao and Han Ru-Qi.Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium[J].Chinese Physics B,2007,16(1):245-248. |
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| Authors: | Han De-Dong Kang Jin-Feng Liu Xiao-Yan Sun Lei Luo Hao and Han Ru-Qi |
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| Institution: | Institute of Microelectronics, Peking University, Beijing 100871, China |
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| Abstract: | This paper reports that the high-K HfO2 gate dielectrics are fabricated on
n-germanium substrates by sputtering Hf on Ge and following by a furnace
annealing. The impacts of sputtering ambient, annealing ambient and
annealing temperature on the electrical properties of high-K HfO2 gate
dielectrics on germanium substrates are investigated. Experimental results
indicate that high-K HfO2 gate dielectrics on germanium substrates with
good electrical characteristics are obtained, the electrical properties of
high-K HfO2 gate dielectrics is strongly correlated with sputtering
ambient, annealing ambient and annealing temperature. |
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| Keywords: | Germanium high-K HfO2 |
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