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Reentrant high-conduction state in CuIr2S4 under pressure |
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| Authors: | Alka B Garg BK Godwal Hans D Hochheimer |
| Institution: | a High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, India b Department of Earth and Planetary Science, University of California Berkeley, Berkeley, CA 94720, USA c Department of Chemistry, Colorado State University, Fort Collins, CO 80523, USA d Department of Physics, Colorado State University, Fort Collins, CO 80523, USA |
| Abstract: | The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr2S4 are reported. The resistance increases gradually and reaches around 12 GPa a value that is approximately forty times the initial value. Above 15 GPa, the resistance decreases up to 30 GPa and on further pressure increase tends to saturate at a value slightly above the ambient pressure value. Thus, the material exhibits a reentrant high conducting phase under pressure. The behaviour of the electrical resistance exhibits a close correlation with the structural evolution with pressure. |
| Keywords: | 62 50 +p 64 30 +t 64 60 i |
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