Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon |
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Authors: | R Job AG Ulyashin WR Fahrner AI Ivanov L Palmetshofer |
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Institution: | (1) University of Hagen, Department of Electrical Engineering, P.O. Box 940, 58084 Hagen, Germany, DE;(2) Belarussian State Polytechnical Academy, Device Performance Department, Skariny Avenue 65, 220027 Minsk, Belarus, BY;(3) Johannes Kepler University, Department of Solid State Physics, 4040 Linz, Austria, AT |
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Abstract: | Oxygen and hydrogen accumulations at buried implantation-damage layers were studied after post-implant-ation annealing of
hydrogen- and helium-implanted Czochralski (Cz) silicon. Hydrogen implantation was carried out at energies E=180 keV and doses
D=2.7×1016 cm-2, and helium implantation at E=300 keV and D=1016 cm-2. For comparison hydrogen implantation was also done into float-zone (Fz) silicon wafers. Post-implantation annealing at 1000 °C
was done either in H2 or N2 atmosphere. Hydrogen and oxygen concentration profiles were measured by secondary ion mass spectroscopy (SIMS). It is shown
that the ambient during annealing plays a significant role for the gettering of oxygen at buried implantation-damage layers
in Cz Si. For both hydrogen and helium implantations, the buried defect layers act as rather effective getter centers for
oxygen and hydrogen at appropriate conditions. The more efficient gettering of oxygen during post-implantation annealing in
a hydrogen ambient can be attributed to a hydrogen-enhanced diffusion of oxygen towards the buried implantation-damage layers,
where a fast oxygen accumulation occurs. Oxygen concentrations well above 1019 cm-3 can be obtained. From the comparison of measurements on hydrogen-implanted Cz Si and Fz Si one can conclude that at the buried
defect layers hydrogen is most probably trapped by voids and/or may be stable as immobile molecular hydrogen species. Therefore
hydrogen accumulated at the defect layers, and is preserved even after high-temperature annealing at 1000 °C.
Received: 3 July 2000 / Accepted: 11 July 2000 / Published online: 22 November 2000 |
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Keywords: | PACS: 81 40 Wx 81 65 Tx 85 40 Ry |
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