Preparation and characterization of ferroelectric SrBi2Ta2O9 thin films on Si using Al2O3 buffer layers |
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Authors: | XH Liu ZG Liu JM Liu |
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Institution: | (1) Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China (Fax: +86-25/359-5535, E-mail: xhliu@nju.edu.cn), CN |
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Abstract: | SrBi2Ta2O9 (SBT) thin films were prepared on p-type Si(100) substrates with Al2O3 buffer layers. Both the SBT films and the Al2O3 buffer layers were deposited by a pulsed laser deposition technique using a KrF excimer laser. An Al prelayer was used to
prevent Si surface oxidization in the initial growth stage. It is shown that Al2O3 buffer layers effectively prevented interdiffusion between SBT and Si substrates. Furthermore, the capacitance–voltage (C-V)
characteristics of the SBT/Al2O3/Si heterostructures show a hysteresis loop with a clockwise trace, demonstrating the ferroelectric switching properties of
SBT films and showing a memory window of 1.6 V at 1 MHz.
Received: 17 July 2000 / Accepted: 16 August 2000 / Published online: 30 November 2000 |
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Keywords: | PACS: 73 40 Ov 77 84 -s 77 90 +k 85 50 Ly 81 15 Fg |
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