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氟化电热蒸发/ICP—AES直接测定SiO2中痕量Fe
引用本文:彭天右,熊宏春.氟化电热蒸发/ICP—AES直接测定SiO2中痕量Fe[J].分析科学学报,1997,13(3):210-212.
作者姓名:彭天右  熊宏春
作者单位:武汉大学化学系
基金项目:国家自然科学基金,国家教委博士点基金
摘    要:对氟化电热蒸发(FETV)/ICP-AES技术中元素的氟化蒸发行为,基体效应和粒度效应进行了考察,确定了杂质(Fe)与基体(Si)分离的最佳实验条件,本法用于SiO2中痕量Fe的直接测定,有灵敏,简便,试样消耗少和不需化学处理等优点。

关 键 词:PTFE  FETV  ICP  AES  二氧化硅  

Direct Determination of Trace Fe in SiO 2 with Flourination Electrothermal Vaporization (FETV) ICP AES
Peng Tianyou,Xiong Hongchun,Jiang Zucheng.Direct Determination of Trace Fe in SiO 2 with Flourination Electrothermal Vaporization (FETV) ICP AES[J].Journal of Analytical Science,1997,13(3):210-212.
Authors:Peng Tianyou  Xiong Hongchun  Jiang Zucheng
Abstract:The effects of particle size and influence of matrix on Fe signal in FETV ICP AES have been investigated in detail. The fluorinating vaporization behaviors of Si and Fe were also studied. Under optimal experimental conditions, the proposed approach has been applied to the determination of trace Fe in SiO 2 powder. It is a direct, rapid and sensitive method as well as low sample volume and no pretreatment.
Keywords:Slurry sampling  Fluorination  ETV  ICP  AES  Selective volatility  SiO 2
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