| F原子与SiC(100)表面相互作用的分子动力学模拟 |
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| 引用本文： | 贺平逆,吕晓丹,赵成利,宁建平,秦尤敏,苟富均.F原子与SiC(100)表面相互作用的分子动力学模拟[J].物理学报,2011,60(9):95203-095203. |
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| 作者姓名： | 贺平逆 吕晓丹 赵成利 宁建平 秦尤敏 苟富均 |
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| 作者单位： | (1)贵州大学等离子体与材料表面作用研究所,贵阳 550025; (2)贵州大学等离子体与材料表面作用研究所,贵阳 550025;贵州大学理学院,贵阳 550025; (3)四川大学原子核科学技术研究所辐射物理及技术教育部重点实验室,成都 610064;荷兰皇家科学院等离子体所,荷兰 2300 |
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| 基金项目： | 贵州省优秀青年科技人才培养计划(批准号:700968101)和国际热核聚变实验堆(ITER)计划专项(批准号:2009GB104006)资助的课题. |
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| 摘 要： | 本文采用分子动力学模拟方法研究了F原子(能量在0.5—15 eV之间)与表面温度为300 K的SiC(100)表面的相互作用过程. 考察了不同能量下稳定含F反应层的形成过程和沉积、刻蚀过程的关系以及稳定含F反应层对刻蚀的影响. 揭示了低能F原子刻蚀SiC的微观动力学过程. 模拟结果表明伴随着入射F原子在表面的沉积量达到饱和,SiC表面将形成一个稳定的含F反应层. 在入射能量小于6 eV时,反应层主要成分为SiF3,最表层为Si-F层. 入射能量大于6 eV时,反应层主要成分为SiF.
关键词：
分子动力学
刻蚀
能量
SiC
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| 关 键 词： | 分子动力学 刻蚀 能量 SiC |
| 收稿时间： | 2010-08-17 |
Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100) |
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| He Ping-Ni,Lü Xiao-Dan,Zhao Cheng-Li,Ning Jian-Ping,Qing You-Min,Gou Fu-Jun.Molecular dynamics simulations of energy effectson atorn F interaction with SiC(100)[J].Acta Physica Sinica,2011,60(9):95203-095203. |
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| Authors: | He Ping-Ni Lü Xiao-Dan Zhao Cheng-Li Ning Jian-Ping Qing You-Min Gou Fu-Jun |
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| Institution: | Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China;science College of Guizhou University, Guiyang 550025, China;Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China;Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China;science College of Guizhou University, Guiyang 550025, China;Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China;Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China;Key Laboratory for Radiation Physics and Technology Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University,Chengdu 610064, China;FOM Institute for Plasma Physics, 3439 MN Nieuwegein, Netherlands |
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| Abstract: | In this study, molecular dynamics simulations are used to investigate atom F interacting with SiC at 300 K. Simulation results show that with the saturation of the deposition of F atoms on the surface, the compositions (SiFx and CFx groups (x<4)) in the reaction layer reach a steady state. When incident energy is less than 6 eV, no etching is observed. With incident energy increasing, the etching yields of Si and C atoms increase. It is found that Si atoms are preferentially removed. For etching products, SiF4 is dominant. And the main etching mechanism of Si atoms is chemical etching. |
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| Keywords: | molecular dynamics etching energy SiC |
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