Young’s modulus and density of nanocrystalline cubic boron nitride films determined by dispersion of surface acoustic waves |
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| Authors: | G Lehmann P Hess S Weissmantel G Reisse P Scheible A Lunk |
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| Institution: | (1) Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany (Fax: +49-6221/54-4255, E-mail: Peter.Hess@urz.uni-heidelberg.de), DE;(2) Hochschule Mittweida, University of Applied Sciences, Technikumplatz 17, 09648 Mittweida, Germany (Fax: +49-3727/58-1379, E-mail: GReisse@htwm.de), DE;(3) Institut für Plasmaforschung, University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart, Germany (Fax: +49-711/685-3102, E-mail: lunk@ipf.uni-stuttgart.de), DE |
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| Abstract: | Cubic boron nitride (c-BN) films of 200–420 nm thickness and high phase purity were deposited on silicon (100) substrates
by ion-assisted pulsed laser deposition (IA PLD)from a boron nitride target using a KrF-excimer laser, and by plasma-enhanced
physical vapor deposition (PE PVD)with a hollow-cathode arc evaporation device. In order to improve the c-BNfilm adhesion,
hexagonal boron nitride (h-BN) films with 25–50 nm thickness were used as buffer layers. The density and Young’s modulus of
the c-BNfilms were obtained by investigating the dispersion of surface acoustic waves. In data analysis a two-layer model
was applied in order to take the influence of the h-BNlayer into consideration. The values for the density vary from 2.95±0.25 g/cm3to 3.35±0.3 g/cm3, and those for the Young’s modulus from 420±40 GPa to 505±30 GPa. The results are compared with literature values reported
for nanocrystalline films, polycrystalline disks and single crystal c-BN.
Received: 26 March 2001 / Accepted: 29 March 2001 / Published online: 25 July 2001 |
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| Keywords: | PACS: 43 35 68 35 68 60 81 05 |
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