1. Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden;2. Center for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden;3. Center for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, SwedenPhone: +46 46 222 9765, Fax: +46 46 222 3637
Abstract:
Heteroepitaxial growth of III‐Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au‐seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb–GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained.
