Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction |
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摘 要: | In this paper, we propose the near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi2) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi2/4H-SiC detector, which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015 cm-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side. The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.
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关 键 词: | β-FeSi2/4H-SiC near-infrared photodetector spectral response |
收稿时间: | 2012-04-20 |
Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction |
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Authors: | Pu Hong-Bin He Xin Quan Ru-Dai Cao Lin Chen Zhi-Ming |
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Institution: | Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China |
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Abstract: | In this paper, we propose the near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi2) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi2/4H-SiC detector, which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015 cm-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side. The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices. |
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Keywords: | β-FeSi2/4H-SiC near-infrared photodetector spectral response |
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