| La_(0.7-x)Gd_xSr_(0.3)MnO_3(x=0.20,0.30,0.40,0.50)的TCR研究(英文) |
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| 引用本文： | 宋启祥,蔡之让,王桂英,严国清.La_(0.7-x)Gd_xSr_(0.3)MnO_3(x=0.20,0.30,0.40,0.50)的TCR研究(英文)[J].低温物理学报,2009(4). |
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| 作者姓名： | 宋启祥 蔡之让 王桂英 严国清 |
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| 作者单位： | 宿州学院自旋电子与纳米材料安徽省重点实验室;南京大学固体微结构物理国家重点实验室; |
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| 基金项目： | supported by the Natural Science Foundation of the Anhui Higher Education Institutions of China(2006KJ266B、ZD2007003-1); Natural Science Research Project of Colleges and Universities of Anhui Province(KJ2008A19ZC)~~ |
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| 摘 要： | 研究了La位Gd掺杂对La0.7-xGdxSr0.3MnO3(x=0.20,0.30,0.40,0.50)体系的电阻温度系数(TCR)的影响.实验结果表明:Gd掺杂将引起电阻率曲线的急剧变化,导致出现大的TCR;而且随Gd掺杂的增加,TCR在x=0.30出现峰值,然后随掺杂量增加逐步降低.体系出现大的TCR,来源于Gd掺杂引起的额外磁性耦合.
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| 关 键 词： | 电阻温度系数 额外磁性耦合 |
TCR RESEARCH ON La_(0.7-x)Gd_xSr_(0.3)MnO_3(x=0.20,0.30,0.40,0.50) |
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| SONG Qi-xiang CAI Zhi-rang WANG Gui-ying YAN Guo-qing, Anhui Key Laboratory of Spin Electron , Nanomaterials,Suzhou College,Anhui Suzhou National Laboratory of Solid State Microstructures,Physics.TCR RESEARCH ON La_(0.7-x)Gd_xSr_(0.3)MnO_3(x=0.20,0.30,0.40,0.50)[J].Chinese Journal of Low Temperature Physics,2009(4). |
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| Authors: | SONG Qi-xiang CAI Zhi-rang WANG Gui-ying YAN Guo-qing Anhui Key Laboratory of Spin Electron Nanomaterials Suzhou College Anhui Suzhou National Laboratory of Solid State Microstructures Physics |
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| Institution: | SONG Qi-xiang1 CAI Zhi-rang1 WANG Gui-ying1 YAN Guo-qing1,2 1 Anhui Key Laboratory of Spin Electron and Nanomaterials(Cultivating Base),Suzhou College,Anhui Suzhou 234000 2 National Laboratory of Solid State Microstructures,Physics Department,Najing University,Nanjing 210093 |
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| Abstract: | The influence of Gd doping at La site on the temperature coefficient of resistance(TCR)of La0.7-xGdxSr0.3MnO3(x=0.20,0.30,0.40,0.50)system has been studied.The experimental results show that Gd doping causes the resistivity curves to change sharply and leads to large TCR.Furthermore,with the increase of Gd doping,TCR exhibits a peak value at x=0.30 but decreases gradually with temperature.The large TCR of the system is driven by an extra magnetic coupling induced by Gd doping. |
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| Keywords: | temperature coefficient of resistance extra magnetic coupling |
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