Influence of N2 flow ratio on the properties of hafnium nitride thin films prepared by DC magnetron sputtering |
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| Authors: | Longyan Yuan Guojia Fang Chun Li Nishuang Liu Yanzhao Cheng Xingzhong Zhao |
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| Institution: | a Key Lab of Acoustic and Photonic Materials and Devices of Ministry of Education, and Department of Physics, Wuhan University, Wuhan 430072, People's Republic of China
b State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China |
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| Abstract: | Hafnium nitride (Hf-N) thin films were deposited on fused silica at different N2 flow ratio (N2/N2 + Ar) using a reactive DC magnetron sputtering system. A gradual evolution in the composition of the films from Hf3N2, HfN, to higher nitrides was found through X-ray diffraction (XRD). Films of Hf3N2 and HfN show positive temperature coefficients of resistivity, while higher nitride has a negative one. Highly oriented growth of (0 0 1) Hf3N2 and NaCl-structure (1 0 0) HfN films were fabricated on fused silica substrate at relatively lower temperature of 300 °C. The electrical resistivity values of both as-deposited and post-deposition annealed films were measured by a four-point probe method. The obtained minimum resistivity of as-deposited film is 20 μΩ cm, and this result shows potential application of HfN films as electrode materials in electronic devices. |
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| Keywords: | 73 61 r 72 80 Ga 78 66 Li |
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