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Nanofabrication of 50 nm zone plates through e-beam lithography with local proximity effect correction for x-ray imaging
作者姓名:朱静远  张思超  谢珊珊  徐晨  张丽娟  陶旭磊  任玉琦  王玉丹  邓彪  邰仁忠  陈宜方
作者单位:Nanolithography and Application Research Group;Shanghai Synchrotron Radiation Facility
基金项目:Project supported by the National Natural Science Foundation of China(Grant No.U1732104);China Postdoctoral Science Foundation(Grant No.2017M611443);Shanghai STCSM2019-11-20 Grant,China(Grant No.19142202700)。
摘    要:High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmost zone-width is shrinking down to 50 nm or even below,patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect.The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction(PEC),because of the large variety in the line width.This work develops a new strategy,nicknamed as local proximity effect correction(LPEC),efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction.By this way,50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated.Their imaging capability in soft(1.3 keV)and hard(9 keV)x-ray,respectively,has been demonstrated in Shanghai Synchrotron Radiation Facility(SSRF)with the resolution of 50 nm.The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.

关 键 词:FRESNEL  zone  PLATES  electron  beam  LITHOGRAPHY  LOCAL  PROXIMITY  effect  correction  x-ray  imaging  50  NM  resolution

Nanofabrication of 50 nm zone plates through e-beam lithography with local proximity effect correction for x-ray imaging
Jingyuan Zhu,Sichao Zhang,Shanshan Xie,Chen Xu,Lijuan Zhang,Xulei Tao,Yuqi Ren,Yudan Wang,Biao Deng,Renzhong Tai,Yifang Chen.Nanofabrication of 50 nm zone plates through e-beam lithography with local proximity effect correction for x-ray imaging[J].Chinese Physics B,2020(4):456-461.
Authors:Jingyuan Zhu  Sichao Zhang  Shanshan Xie  Chen Xu  Lijuan Zhang  Xulei Tao  Yuqi Ren  Yudan Wang  Biao Deng  Renzhong Tai  Yifang Chen
Institution:(Nanolithography and Application Research Group,State Key Laboratory of Asic and System,School of Information Science and Engineering,Fudan University,Shanghai 200433,China;Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201204,China)
Abstract:High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology. When the outmost zone-width is shrinking down to 50 nm or even below, patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect. The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction (PEC), because of the large variety in the line width. This work develops a new strategy, nicknamed as local proximity effect correction (LPEC), efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction. By this way, 50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated. Their imaging capability in soft (1.3 keV)and hard (9 keV) x-ray, respectively, has been demonstrated in Shanghai Synchrotron Radiation Facility (SSRF) with the resolution of 50 nm. The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.
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