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Stimulated self-trapped exciton emission in CsI:Pb |
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| Authors: | Pasquale FabeniAleksei Krasnikov Martin NiklGian Paolo Pazzi Svetlana Zazubovich |
| Institution: | a IFAC del CNR, Via Panciatichi 64, 50127 Florence, Italy b Institute of Physics, University of Tartu, Riia Street 142, 51014 Tartu, Estonia c Institute of Physics AS CR, Cukrovarnicka 10, 16253 Prague, Czech Republic |
| Abstract: | Defects of the type of VK and Pb+ centres were created in CsI:Pb under the 4.03 eV XeCl laser line irradiation at 10 K. After irradiation, the self-trapped and localized exciton emission excited by the same XeCl laser line was observed as a result of the recombination of electrons, optically released from Pb+, with the VK centres. A strongly superlinear dependence of the emission intensity on the excitation intensity was found for the 3.65 eV emission of the self-trapped exciton. A much weaker superlinearity was observed for the visible localized exciton emission. Optical amplification of the exciton emission was considered as the most probable reason of the observed phenomenon. At 10 K, optical gain G=3.74 was calculated for the self-trapped exciton emission. |
| Keywords: | 71 35 &minus y 78 45 +h 61 80 Ba 78 55 &minus m 78 55 Fv |
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