Electronic structure of Cr1−δS (δ=0, 0.17) with NiAs-type crystal structure |
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Authors: | M KoyamaH Sato Y UedaC Hirai M Taniguchi |
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Institution: | a Kure National College of Technology, Agaminami 2-2-11, Kure 737-8506, Japan b Graduate School of Science, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8526, Japan c Hiroshima Synchrotron Radiation Center, Hiroshima University, Kagamiyama 2-313, Higashi-Hiroshima 739-8526, Japan |
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Abstract: | Valence-band and conduction-band the electronic structure of the CrS (δ=0) and Cr5S6 (δ=0.17) has been investigated by means of photoemission and inverse-photoemission spectroscopies. The bandwidth of the valence bands of Cr5S6 (8.5 eV) is wider than that of CrS (8.1 eV), though the Cr 3d partial density of states evaluated from the Cr 3p-3d resonant photoemission spectroscopy is almost unchanged between the two compounds concerning shapes as well as binding energies. The Cr 3d (t2g) exchange splitting energies of CrS and Cr5S6 are determined to be 3.9 and 3.3 eV, respectively. |
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Keywords: | 71 20 Be 79 60 &minus i |
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