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| (Si,Er)双注入热氧化硅的光致发光 | |
| 引用本文： | 肖志松,徐飞,张通和,程国安,顾岚岚.(Si,Er)双注入热氧化硅的光致发光[J].光谱学与光谱分析,2002,22(4):538-541. |
| 作者姓名： | 肖志松 徐飞 张通和 程国安 顾岚岚 |
| 作者单位： | 1. 北京师范大学射线束技术与材料改性教育部重点实验室,北京师范大学低能核物理研究所,北京市辐射中心,北京,100875 2. 南昌大学材料科学与工程系,江西,南昌,330047;复旦大学应用表面物理国家重点实验室,上海,200433 3. 南昌大学材料科学与工程系,江西,南昌,330047 4. 复旦大学应用表面物理国家重点实验室,上海,200433 |
| 基金项目： | 国家自然科学基金 ( 596710 51)，复旦大学应用表面物理国家重点实验室基金资助课题 |
| 摘 要： | 采用强流金属蒸汽真空弧（MEVVA）离子源注入机，先将Si大束流注入热氧化SiO2/单晶硅，直接形成镶嵌在SiO2中的纳米晶Si，再小束流注入Er。Er离子在掺杂层中的浓度可达10^21cm^-3量级，大大地提高了作为孤立发光中心的Er^3 浓度。在77K和室温下，观察到了Er^3 的1.54цm特征发射。 |
| 关 键 词： | 氧化硅 离子注入 纳米硅 铒 光致发光 半导体材料 掺杂 稀土 |
| 文章编号： | 1000-0593(2002)04-0538-04 |
| 修稿时间： | 2001年1月17日 |
Photoluminescence from Si and Er Dual-implanted Si-rich Thermal Oxidation SiO2/Si Thin Films |
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| Zhi-song Xiao,Fei Xu,Tong-he Zhang,Guo-an Cheng,Lan-lan Gu.Photoluminescence from Si and Er Dual-implanted Si-rich Thermal Oxidation SiO2/Si Thin Films[J].Spectroscopy and Spectral Analysis,2002,22(4):538-541. | |
| Authors: | Zhi-song Xiao Fei Xu Tong-he Zhang Guo-an Cheng Lan-lan Gu |
| Institution: | Key Laboratory in University for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing Radiation Center, Beijing 100875, China. |
| Abstract: | Si and Er ions were implanted into Si-rich thermal oxidation SiO2/Si thin film using metal vapor vacuum arc (MEVVA) ion source implanter, which could produce ion beams with high-fluence and strong-flux. Rutheroford backscattering spectra show that Er concentration in as-implanted sample is attained to 10 at. % corresponding to the level of 10(21) atoms.cm-3. Needle nanocrystal Si in the surface of annealed samples have been formed during ion implantation followed by rapid thermal annealing. Photoluminescence around 1.54 microns from Er-doped Si-rich thermal oxidized SiO2/Si thin film were observed at 77 K and room-temperature (RT). Light emission around the wavelength of 1.54 microns were closely related to many conditions including substrate, ion implantation and annealing etc. |
| Keywords: | Ion implantation Erbium Nanocrystal Si Photoluminescence |
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