Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface |
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| Authors: | GENG Li MAGYARI-KOPE Blanka ZHANG Zhi-Yong NISHI Yoshio |
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| Institution: | Department of Microelectronics, Xi'an Jiaotong University, Xi'an 710049Department of Electrical Engineering, Stanford University, Stanford, California 94305, USADepartment of Chemical Engineering, Stanford University, Stanford, California 94305, USA |
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| Abstract: | A new method is proposed to modify the Schottky barrier height (SBH) for nickel silicide/Si contact. Chemical and electrical properties for NiSi2/Si interface with titanium, scandium and vanadium incorporation are investigated by first-principles calculations. The metal/semiconductor interface states within the gap region are greatly decreased, which is related to the diminutions of junction leakage when Ti-cap is experimentally used in nickel silicide/Si contact process. It leads to an unpinning metal/semiconductor interface. The SBH obeys the Schottky-Mott theory. Compared to Ti substitution, the SBH for electrons is reduced for scandium and increases for vanadium. |
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| Keywords: | 73 20 -r 73 30 +y |
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