| Novel photoluminescence properties of InAlO3（ZnO）m superlattice nanowires |
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| 引用本文： | 刘欣,黄东亮,武立立,张喜田,张伟光.Novel photoluminescence properties of InAlO3（ZnO）m superlattice nanowires[J].中国物理 B,2011,20(7):78101-078101. |
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| 作者姓名： | 刘欣 黄东亮 武立立 张喜田 张伟光 |
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| 作者单位： | Heilongjiang Province Key Laboratory for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China |
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| 基金项目： | Project supported by the Science Foundation for Distinguished Young Scholars of Heilongjiang Province, China （Grant No. JC200805）, the Natural Science Foundation of Heilongjiang Province of China （Grant Nos. A2007-03, A200807, and F200828）, and the Personnel Bureau Project of Overseas Talent of Heilongjiang Province, China. |
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| 摘 要： | One-dimension InAlO 3 (ZnO) m superlattice nanowires were successfully synthesized via chemical vapor deposition.Transmission electron microscopy measurements reveal that the nanowires have a periodic layered structure along the 0001 direction.The photoluminescence properties of InAlO 3 (ZnO) m superlattice nanowires are studied for the first time.The near-band-edge emissions exhibit an obvious red shift due to the formation of the localized tail states.The two peaks centered at 3.348 eV and 3.299 eV indicate a lever phenomenon at the low-temperature region.A new luminescence mechanism is proposed,combined with the special energy band structure of InAlO 3 (ZnO) m.
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| 关 键 词： | InAlO 3 (ZnO) m superlattice nanowires photoluminescence energy band structure |
| 收稿时间： | 2011-01-19 |
Novel photoluminescence properties of InAlO3(ZnO)m superlattice nanowires |
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| Liu Xin,Huang Dong-Liang,Wu Li-Li,Zhang Xi-Tian and Zhang Wei-Guang.Novel photoluminescence properties of InAlO3(ZnO)m superlattice nanowires[J].Chinese Physics B,2011,20(7):78101-078101. |
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| Authors: | Liu Xin Huang Dong-Liang Wu Li-Li Zhang Xi-Tian and Zhang Wei-Guang |
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| Institution: | Heilongjiang Province Key Laboratory for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China;Heilongjiang Province Key Laboratory for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China;Heilongjiang Province Key Laboratory for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China;Heilongjiang Province Key Laboratory for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China;Heilongjiang Province Key Laboratory for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China |
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| Abstract: | One-dimension InAlO3(ZnO)m superlattice nanowires were successfully synthesized via chemical vapor deposition. Transmission electron microscopy measurements reveal that the nanowires have a periodic layered structure along the 〈0001〉 direction. The photoluminescence properties of InAlO3(ZnO)m superlattice nanowires are studied for the first time. The near-band-edge emissions exhibit an obvious red shift due to the formation of the localized tail states. The two peaks centered at 3.348 eV and 3.299 eV indicate a lever phenomenon at the low-temperature region. A new luminescence mechanism is proposed, combined with the special energy band structure of InAlO3(ZnO)m. |
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| Keywords: | InAlO3(ZnO)m superlattice nanowires photoluminescence energy band structure |
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