金属有机物化学气相法制备YBCO超导薄膜研究

运用金属有机物化学气相沉积法(MOCVD),在LaAlO3(LAO)单晶上沉积YBa2Cu3O7-x(YBCO)超导薄膜。通过使用优化的进液装置,使金属有机源连续、稳定地输送至蒸发皿进行闪蒸。通过优化总气压、氧分压等生长条件,获得高质量的YBCO薄膜。在固定的温度条件下,调节反应总气压和氧分压,在总压为380Pa,氧分压为180Pa获得YBCO薄膜临界电流密度Jc=0.6MA/cm2。随着氧分压增大,YBCO薄膜产生a轴取向,(005)峰向左偏移,且薄膜中的Cu/Ba由1.0变化至1.63。在Cu/Ba=1.48时,YBCO薄膜结构与性能较优。

Preparation of YB_2C_3O_(7-x) thin film by MOCVD

In this paper, YBa_2Cu_3O_(7-x) superconducting thin films were grown on LAO(001) single crystal substrates by MOCVD. Optimized liquid delivering equipment was used for continuous and stable supply of the MO sources. At 870℃, total pressure of 380Pa, O_2 partial pressure of 180Pa, we obtained the YBCO thin film with fully c-axis and the critical current density J_c=0.6MA/cm~2. At fixed conditions, with the increasing of O2 partial pressure, a-axis YBCO films were obtained, (005) peaks moved, and the Cu/Ba of the thin film was changed from 1.0 to 1.63.