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Luminescence from Si-Si1−xGex/Si1−yCy-Si structures |
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| Authors: | Kenneth B Joelsson Galia Pozina Wei-Xin Ni Chun-Xia Du Gran V Hansson |
| Institution: | Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden |
| Abstract: | Near band edge photoluminescence has been obtained from Si1?yCy quantum well (QW) and neighboring Si1?xGex/Si1?yCy double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si1?xGex layer has been observed from neighboring Si1?xGex and Si1?yCy DQW structures. |
| Keywords: | SiC quantum well SiGe quantum well Photoluminescence Electroluminescence |
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