Thermally curable organic/inorganic hybrid polymers as gate dielectrics for organic thin‐film transistors |
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| Authors: | Jong‐Woon Ha Yuntae Kim Jeongkyun Roh Fei Xu Jong Il Park Jeonghun Kwak Changhee Lee Do‐Hoon Hwang |
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| Institution: | 1. Department of Chemistry and Chemistry Institute for Functional Materials, Pusan National University, , Busan, 609‐735 Korea;2. Department of Electrical and Computer Engineering, Inter‐University Semiconductor Research Center, Seoul National University, , Seoul, 151–744 Korea;3. Department of Electronic Engineering, Dong‐A University, , Busan, 604‐714 Korea |
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| Abstract: | New low‐temperature curable organic/inorganic hybrid polymers were designed and synthesized as gate dielectrics for organic thin‐film transistors (OTFTs). Allyl alcohols were introduced to polyhedral oligomeric silsesquioxane (POSS) via hydrosilyation to produce an alcohol‐functionalized POSS derivative (POSS‐OH). POSS‐OH was then reacted with hexamethoxymethylmelamine at carrying molar ratios at 80 °C in the presence of a catalytic amount of p‐toluenesulfonic acid to give highly cross‐linked network polymers (POSS‐MM). The prepared thin films were smooth and hard after the thermal cross‐linking reaction and had very low leakage currents (<10?8 A/cm2) with no significant absorption over the visible spectral range. Pentacene‐based OTFTs using the synthesized insulators as gate dielectric layers had higher hole mobilities (up to 0.36 cm2/Vs) than a device using thermally cross‐linked poly(vinyl phenol) and melamine as the gate dielectric layer (0.18 cm2/Vs). © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 3260–3268 |
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| Keywords: | crosslinking curing of polymer insulator organic thin‐film transistor thin film |
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