用等离子体增强化学汽相沉积方法制备纳米晶粒硅薄膜光致发光

报道用高氢稀释硅烷为反应气源，用等高子体增强化学汽相沉积（ＰＥＣＶＤ）方法淀积的含有纳米晶粒硅薄膜，未经任何后处理过程，在室温下观察到可见光致发光。将此光发射归因于纳米硅晶粒中的光生载流子在量子尺寸效应下所产生的光子能量高于硅单晶本体能隙，还对发光具有重要影响的一些淀积参数进行了研究。 关键词：

PHOTOLUMINESCENCE FROM NANO-CRYSTALLITES OF SILICON FILMS PREPARED BY PECVD

We report in this paper the observation of visible photoluminescence (PL) at room temperature from nano-crystallites of silicon films, which are prepared in a PE CVD system by using strong hydrogen diluted silane as the reactant gas source, without any post-processings. We attribute the PL to the photons above the band gap of bulk crystal silicon created by the carriers in the nano-crystallites under the function of quantm size effect. The effective deposition parameters are concerned.