Synthesis of GaN nanowires by Tb catalysis |
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Authors: | Jinhua Chen Huizhao Zhuang Lixia Qin Hong Li Zhaozhu Yang |
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Institution: | Institute of Semiconductors, Shandong Normal University, No. 88 East Culture Road, Ji’nan 250014, China |
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Abstract: | Rare earth metal seed Tb was employed as catalyst for the growth of GaN wires. GaN nanowires were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1 1 1) substrates. The samples characterization by X-ray diffraction and Fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite GaN. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal GaN nanowire structures. The growth mechanism of the GaN nanowires is discussed. |
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Keywords: | 68 65 &minus k 78 30 Fs 81 16 &minus c |
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