Self-trapping of weak optical beams in photorefractive materials |
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Authors: | Z M Sheng Y Cui Y Wei |
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Institution: | 1. National Laboratory of Molecular and Biomolecular Electronics, Southeast University, 210096, Nanjing, People's Republic of China 2. Department of Electronic Engineering, Southeast University, 210096, Nanjing, People's Republic of China
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Abstract: | Intensity-independent self-trapping of optical beams in photorefractive crystals was found recently. But we show that due to the existence of dark conductivity in some photorefractive materials or coherent and non-coherent background irradiance, the self-trapping of weak optical beams in photorefractive materials, such as SBN, becomes intensity dependent. The threshold condition of the applied external de electric field for self-trapping is determined as function of the material parameters as well as the initial transverse sizes and relative intensities of the beams. |
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Keywords: | PACS" target="_blank">PACS 42 25 Bs 42 60 Fc 42 65 Jx |
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