Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces |
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Authors: | GAO Hai-Yong YAN Fa-Wang FAN Zhong-Chao LI Jin-Min ZENG Yi-Ping WANG Guo-Hong |
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Institution: | Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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Abstract: | p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The light extraction of the LEDs withnano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces. |
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Keywords: | 78 66 Fd 52 77 Bn 81 65 Cf |
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