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Magneto-transport properties of [Co/Bi]n wire structures |
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| Authors: | C Christides Th Speliotis M Chatzichristidi I Raptis |
| Institution: | 1. Department of Engineering Sciences, University of Patras, Rion, Patras 26504, Greece;2. Institute of Materials Science, NCSR “Demokritos”, Athens 15310, Greece;3. Institute of Microelectronics, NCSR “Demokritos”, Athens 15310, Greece |
| Abstract: | The present study examines the artificial control of grain-boundary resistance and its contribution to the magneto-transport properties of Co(1 nm)/Bi(2.5 nm)]n (n=10 or 20) line structures on the Si(0 0 1)/SiNx substrate. Conventional patterning and deposition processes are applied for the fabrication of a device that consists of five-line structures with a line width of 2 μm. A ΔR/R=80% ratio was observed in the five-line structure of Co(1 nm)/Bi(2.5 nm)]10 multilayers at 10 K. Our measurements indicate that grain-boundary effects can be associated with the large ΔR/R ratio of transverse magnetoresistance. |
| Keywords: | 75 70 &minus i 75 60 &minus d 73 50 Jt 73 50 &minus h 85 70 |
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