The investigation of ion implanted layers by scanning electron microscopy |
| |
Authors: | W Rothemund C R Fritzche |
| |
Institution: | 1. Institut für Angewandte Festk?rperphysik, Fraunhofer-Gesellschaft, D-7800, Freiburg, Germany
|
| |
Abstract: | SEM signals were used to image ion-implanted surfaces and to quantitatively analyze implanted layers. Silicon was used as
substrate material for implantation, but some measurements on GaAs are also reported. Various ion species were implanted and
the dependence of the signals upon fluence was studied. Electron backscattering and absorbed current were found to be influenced
by the radiation damage rather than by the species of implanted ions. The degree of damage could be characterized by absorbed
current measurements. The ion fluence necessary to produce amorphous layers was determined for N, P, and As in Si using this
technique. This fluence was found to correspond to an energy deposition of 2.8×1021 keV/cm3. For the detection of very small amounts of implanted ions by characteristic X-rays, the electron energy must be fitted to
the penetration depth of the ions under conditions maintaining reasonable excitation cross sections. The lowest value of the
normalized detectability obtained in our measurements was 2.5×1013 Ions/cm2 for 45 keV phosphorus. |
| |
Keywords: | 79 20 61 80 |
本文献已被 SpringerLink 等数据库收录! |
|