Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing |
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Authors: | S Abedrabbo Q Mohammed |
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Institution: | a Department of Physics, University of Jordan, Amman 11942, Jordan b Tadawul Shares and Bonds Mediation L.L.C., Dubai, United Arab Emirates c Department of Physics, New Jersey Institute of Technology, Newark, NJ 07901, United States |
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Abstract: | Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar+ ions were implanted at 300 keV. Oxygen was incorporated by O+-ion implantation at 130 keV. Samples were annealed at 600 °C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er3+ transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio. |
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Keywords: | 85 40 Sz 85 40 Ry 61 80 Jh 61 72 sd 68 55 at 78 55 Hx |
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