| Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征 |
| |
| 引用本文： | 周天明,金亿鑫.Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征[J].发光学报,1992,13(1):57-63. |
| |
| 作者姓名： | 周天明 金亿鑫 |
| |
| 作者单位： | 中国科学院长春物理研究所, 长春 130021 |
| |
| 基金项目： | 国家高技术新材料委员会 |
| |
| 摘 要： | Ga1-xInxAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga1-xInxAs(x>0.53)/InAsyP1-y/Inp异质结材料.其中InAs1-yPy为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs1-yPy层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAsyP1-y层通过位错和弹性畸变二种方式来释放或积累Ga1-xInxAs与InP间的失配应力,从而减少了Ga1-xInxAs中的失配位错.有效地改善了Ga1-xInxAs的质量.已获得了x高达0.94表面光亮的Ga1-xInxAs/InAs1-yPy/InP异质结材料.
|
| 关 键 词： | 异质结 半导体 光致发光 MOCVD |
MOCVD GROWTH AND CHARACTERIZATION OF HETEROJUNCTION OF Ga1-xInx As (x>0.53)/ InAs1-y Py/InP |
| |
| Zhou Tianming,Jin Yixin,Jiang Hong,Yuan Jinshan,Zhang Baolin,Du Mingze,Ge Zhongjiu.MOCVD GROWTH AND CHARACTERIZATION OF HETEROJUNCTION OF Ga1-xInx As (x>0.53)/ InAs1-y Py/InP[J].Chinese Journal of Luminescence,1992,13(1):57-63. |
| |
| Authors: | Zhou Tianming Jin Yixin Jiang Hong Yuan Jinshan Zhang Baolin Du Mingze Ge Zhongjiu |
| |
| Institution: | Changchun Institute of Physics, Academia Sinica, Changchun 130021 |
| |
| Abstract: | Ga1-xInxAs (x>0.53) may provide the basic of the device (emitter and detector) for the ultralow loss optical fiber communication system. But the Ga1-xInxAs (x>0.53) is lattice-mismatched with InP substrate. And a large number of misfit dislocations will be introduced in epi-layer. So it is difficult to grow high qulity Ga1-xInxAs (x>0.53) on InP substrate.To reduce misfit dislocations, it would be very effective to insert a step-graded composition layer of InAs1-vPr between Ga1-xInxAs and InP. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《发光学报》浏览原始摘要信息 |
| 点击此处可从《发光学报》下载免费的PDF全文 |
|
