Magnetic and electrical properties of amorphous Ge1−xCrx thin films grown by low temperature vapor deposition |
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| Authors: | Sang Soo Yu Kyung Hee Han Young Eon Ihm Dojin Kim Hyojin Kim Chang Soo Kim Hyun Ryu Sangjun Oh |
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| Institution: | 1. Chungnam National University, Daejeon, 305-764, Korea;2. Korea Research Institute of Standards and Science, Daejeon, 305-600, Korea;3. Korea Basic Science Institute, Daejeon, 305-333, Korea |
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| Abstract: | Amorphous Ge1−xCrx thin films are deposited on (1 0 0)Si by using a thermal evaporator. Amorphous phase is obtained when Cr concentration is lower than 30.7 at%. The electrical resistivities are 1.89×10−3–0.96×102 Ω cm at 300 K, and decrease with Cr concentration. The Ge1−xCrx thin films are p-type. The hole concentrations are 5×1016–7×1021 cm−3 at 300 K, and increase with Cr concentration. Magnetizations are 7.60–1.57 emu/cm3 at 5 K in the applied field of 2 T. The magnetizations decrease with Cr concentration and temperature. Magnetization characteristics show that the Ge1−xCrx thin films are paramagnetic. |
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| Keywords: | 75 50 Pp 75 60 Ej |
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