Effect of laser light on n-GaAs photoetching |
| |
| Authors: | V Švorčík V Rybka |
| |
| Institution: | (1) Department of Electronics Materials, Institute of Chemical Technology, CS-166 28 Prague 6, Czechoslovakia |
| |
| Abstract: | The etching of n-GaAs in aqueous solutions of hydroxides stimulated by HeNe and HeCd laser light was studied. It was found that at low laser-power densities (5–10 W · cm–2) the etched depths do not depend on the wavelength of the incident light. This conclusion is related to the concentration of the photogenerated holes on the semiconductor surface. The diffusion length and absorption depths for HeNe and HeCd lasers are compared. |
| |
| Keywords: | 81 60 82 65 |
| 本文献已被 SpringerLink 等数据库收录！ |
|
