Silicon grain arrays prepared using a pattern crystallization technique of pulsed-excimer laser irradiation |
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Authors: | D He W Cheng H Jia E Xie X Chen G Wu |
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Institution: | (1) Department of Physics, Lanzhou University, Lanzhou 730000, P.R. China, CN;(2) Lanzhou Institute of Physics, Lanzhou 730000, P.R. China, CN |
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Abstract: | Silicon grain arrays were prepared using a pattern crystallization technique of pulsed KrF excimer laser irradiation. The
precursor material was hydrogenated amorphous silicon (a-Si:H) thin films deposited on single crystal Si wafers by plasma-enhanced
chemical vapor deposition. It was shown that Si grains with a uniform size and a well-defined periodicity embedded in the
a-Si:H matrix were obtained by this simple technique. The grain size was less than 2 μm. Relativly strong photo-luminescence
with two peaks at 720 and 750 nm was observed at room temperature. We expect to reduce Si grain sizes by optimizing the growth
conditions of a-Si:H thin films and controlling the temperature distribution in the film during laser irradiation.
Received: 21 November 2000 / Accepted: 12 December 2000 / Published online: 9 February 2001 |
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Keywords: | PACS: 68 55 81 40 78 65 42 55p |
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