A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching |
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Authors: | Ren Min Li Ze-Hong Deng Guang-Min Zhang Ling-Xia Zhang Meng Liu Xiao-Long Xie Jia-Xiong Zhang Bo |
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Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract: | The ruggedness of a superjunction metal-oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET. |
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Keywords: | avalanche current path unclamped inductive switching superjunction MOSFET |
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