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Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure |
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| Authors: | Jingchang Sun Qiuju Feng Jiming Bian Dongqi Yu Chengren Li Jianze Zhao Guotong Du |
| Institution: | a School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China b College of Electronic Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023, China c School of Physics and Optoelectronic Technology of Dalian University of Technology, Dalian 116024, China d International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China |
| Abstract: | A p-ZnO:N/n-GaN:Si structure heterojunction light-emitting diode (LED) is fabricated on c-plane sapphire by full metal organic chemical vapor deposition (MOCVD) technique. The p-type layer with hole concentration of 8.94×1016 cm−3 is composed of nitrogen-doped ZnO using NH3 as the doping source with subsequent annealing in N2O plasma ambient. Silicon-doped GaN film with electron concentration of 1.15×1018 cm−3 is used as the n-type layer. Desirable rectifying behavior is observed from the current-voltage (I-V) curve of the device. The forward turn on voltage is about 4 V and the reverse breakdown voltage is more than 7 V. A distinct ultraviolet (UV) electroluminescence (EL) with a dominant emission peak centered at 390 nm is detected at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence (PL) spectra. |
| Keywords: | p-ZnO:N/n-GaN:Si heterojunction LED UV electroluminescence MOCVD |
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