| Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method |
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| 作者姓名： | 刘奇斌 宋志棠 张楷亮 王良咏 封松林 CHEN Bomy |
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| 作者单位： | [1]Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]Graduate School of Chinese Academy of Sciences, Beijing 100039 [3]Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA |
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| 基金项目： | Supported by Chinese Academy of Sciences （Y2005027）, Science and Technology Council of Shanghai （0452nm012, 04DZ05612, 04ZR14154, 04JC14080, 05JC14076, AM0414, 05nm05043, AM0517）. |
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| 摘 要： | A damascene structure of phase change memory （PCM） is fabricated successfully with the chemical mechanical polishing （CMP） method, and the CMP of Ge2Sb2Te5 （GST） and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy （SEM） and an energy dispersive spectrometer （EDS）. The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90mA and 1.15mA.
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| 关 键 词： | 相变记忆 化学机制抛光法 PCM 钛薄膜 |
| 收稿时间： | 2006-04-10 |
| 修稿时间： | 2006-04-10 |
Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method |
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| LIU Qi-Bin,SONG Zhi-Tang,ZHANG Kai-Liang,WANG Liang-Yong,FENG Song-Lin,CHEN Bomy.Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method[J].Chinese Physics Letters,2006,23(8):2296-2298. |
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| Authors: | LIU Qi-Bin SONG Zhi-Tang ZHANG Kai-Liang WANG Liang-Yong FENG Song-Lin CHEN Bomy |
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| Institution: | 1.Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;2 .Graduate School of Chinese Academy of Sciences, Beijing 100039;3.Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA |
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| Abstract: | A damascene structure of phase change memory (PCM) is fabricated successfully with the chemical mechanical polishing (CMP) method, and the CMP of Ge2Sb2Te5 (GST) and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy (SEM) and an energy dispersive spectrometer (EDS). The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90mA and 1.15mA. |
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| Keywords: | 85 40 -z 85 40 -e 81 65 -b |
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