| Performance improvement of CdS/Cu（In,Ga）Se2 solar cells after rapid thermal annealing |
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| 引用本文： | 陈东生,杨洁,徐飞,周平华,杜汇伟,石建伟,于征汕,张玉红,Brian Bartholomeusz,马忠权.Performance improvement of CdS/Cu（In,Ga）Se2 solar cells after rapid thermal annealing[J].中国物理 B,2013,22(1):18801-018801. |
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| 作者姓名： | 陈东生 杨洁 徐飞 周平华 杜汇伟 石建伟 于征汕 张玉红 Brian Bartholomeusz 马忠权 |
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| 作者单位： | a SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;b College of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090, China;c Shanghai Solar EnerTech Co. Ltd, Shanghai 201206, China;d Applied Quantum Technology Ltd. Co. USA |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No. 60876045);the Shanghai Leading Basic Research Project, China (Grant No. 09JC1405900);the Shanghai Leading Academic Discipline Project, China (Grant No. S30105);the R & D Foundation of SHU-SOENs PV Joint Laboratory, China (Grant No. SS-E0700601) |
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| 摘 要： | In this paper, we investigated the effect of rapid thermal annealing (RTA) on solar cell performance. An opto-electric conversion efficiency of 11.75% (Voc=0.64 V, Jsc = 25.88mA/cm2 , FF=72.08%) was obtained under AM 1.5G when the cell was annealed at 300℃ for 30s. The annealed solar cell showed an average absolute efficiency 1.5% higher than that of the as-deposited one. For the microstructure analysis and the physical phase confirmation, X-ray diffraction (XRD), Raman spectra, front surface reflection (FSR), internal quantum efficiency (IQE), and X-ray photoelectron spectroscopy (XPS) were respectively applied to distinguish the causes inducing the efficiency variation. All experimental results implied that the RTA eliminated recombination centers at the p-n junction, reduced the surface optical losses, enhanced the blue response of the CdS buffer layer, and improved the ohmic contact between Mo and Cu(In, Ga)Se2 (CIGS) layers. This leaded to the improved performance of CIGS solar cell.
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| 关 键 词： | 快速热退火 太阳能电池 CdS 性能改善 Ga X-射线光电子能谱 光电转换效率 微观结构分析 |
| 收稿时间： | 2012-04-27 |
Performance improvement of CdS/Cu(In,Ga)Se2 solar cells after rapid thermal annealing |
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| Chen Dong-Sheng ab, Yang Jiea, Xu Fei a, Zhou Ping-Hua a,Du Hui-Wei a, Shi Jian-Weia, Yu Zheng-Shan c, Zhang Yu-Hong c,Brian Bartholomeuszd, and Ma Zhong-Quan.Performance improvement of CdS/Cu(In,Ga)Se2 solar cells after rapid thermal annealing[J].Chinese Physics B,2013,22(1):18801-018801. |
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| Authors: | Chen Dong-Sheng ab Yang Jiea Xu Fei a Zhou Ping-Hua a Du Hui-Wei a Shi Jian-Weia Yu Zheng-Shan c Zhang Yu-Hong c Brian Bartholomeuszd and Ma Zhong-Quan |
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| Institution: | a SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China;b College of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090, China;c Shanghai Solar EnerTech Co. Ltd, Shanghai 201206, China;d Applied Quantum Technology Ltd. Co. USA |
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| Abstract: | In this paper, we investigated the effect of rapid thermal annealing (RTA) on solar cell performance. An opto-electric conversion efficiency of 11.75% (Voc= 0.64 V, Jsc= 25.88 mA/cm2, FF=72.08%) was obtained under AM 1.5G when the cell was annealed at 300 ℃ for 30 s. The annealed solar cell showed an average absolute efficiency 1.5% higher than that of the as-deposited one. For the microstructure analysis and the physical phase confirmation, X-ray diffraction (XRD), Raman spectra, front surface reflection (FSR), internal quantum efficiency (IQE), and X-ray photoelectron spectroscopy (XPS) were respectively applied to distinguish the causes inducing the efficiency variation. All experimental results implied that the RTA eliminated recombination centers at the p-n junction, reduced the surface optical losses, enhanced the blue response of the CdS buffer layer, and improved the ohmic contact between Mo and Cu(In, Ga)Se2 (CIGS) layers. This leaded to the improved performance of CIGS solar cell. |
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| Keywords: | CdS/Cu(In Ga)Se2 solar cell rapid thermal annealing performance improvement |
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