InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration |
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| Authors: | Li Xin-Kun Jin Peng Liang De-Chun Wu Ju and Wang Zhan-Guo |
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| Institution: | Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained. |
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| Keywords: | quantum dot submonolayer self-assembled superluminescent diode |
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