Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications |
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Authors: | C?Kügeler U?B?ttger T?Schneller |
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Institution: | (1) IFF, Research Centre Jülich, 52425 Jülich, Germany;(2) IWE II, RWTH-Aachen, Sommerfeldstr. 24, 52074 Aachen, Germany |
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Abstract: | This paper focuses on the deposition and electromechanical characterization of lanthanum-doped lead hafnate titanate (PLHT)
thin films as key material in piezoelectric microelectromechanical systems (pMEMS). PLHT (x/30/70) and PLHT(x/45/55) films with a thickness between 150 nm and 250 nm were deposited by chemical solution deposition (CSD). Thereby x varies between 0 and 10% La content. The electrical characterization shows that undoped (x=0) PLHT exhibit ferroelectric behavior similar to PZT of the same composition. La doping results in reduced ferroelectric
properties and also affects the electromechanical properties. Measurements using a double beam laser interferometer yield
a piezoelectric coefficient d
33 of 60 pm/V, which stays constant with an increasing electric field. This leads to a linear displacement compared to undoped
PLHT or conventional PZT films used for MEMS applications. |
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Keywords: | PACS" target="_blank">PACS 77 77 22 Ej 77 65 -j 77 65 Bn 77 84 -s |
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