体结构GaAs光导开关实验研究

 为解决光导开关耐受场强的提高问题，研制了2种体结构光导开关，并进行了实验研究。两种开关均由半绝缘GaAs材料制成，一种尺寸为10.0 mm×10.0 mm×0.6 mm，电极位于10.0 mm×10.0 mm面上相对位置，电极直径6 mm；另一种尺寸为15.0 mm×15.0 mm×3.0 mm，8 mm直径电极位于15.0 mm×15.0 mm面上相对位置。测试了第1种开关在不同半高宽脉冲加载电压下的击穿电压，结果表明其最大耐受电压达7.6 kV，击穿电场127 kV/cm。对第2种结构测试了开关在直流加载条件下的暗态伏安特性并进行了触发实验，结果表明在15 kV工作电压下，其放电最大电流超过3.5 kA。

Experimental study of GaAs photoconductive semiconductor switch with bulk structure

Two kinds of Photoconductive semiconductor switch(PCSSs) with bulk structure are studied experimentally, which are fabricated from semi-insulating GaAs. The first switch has a size of 10 mm×10 mm×0.6 mm, whose electrodes are 6 mm in diameter on the opposite side of the chip. The second one has a size of 15 mm×15 mm×3 mm, whose electrodes are 8 mm in diameter on the opposite side of the chip. The withstand voltage of the first switch is tested under pulse voltages with different full-width-at-half-maximum. A maximum withstand voltage of 7.6 kV is achieved, which means the breakdown electric field is 127 kV/cm. The volt-ampere performance at DC bias voltage and dark condition of the second switch is tested as well as its triggered performance. The maximum current of the switch is more th