首页 | 本学科首页   官方微博 | 高级检索  
     检索      

温度和电压对双层有机发光二极管复合效率的影响
引用本文:许雪梅,彭景翠,李宏建,瞿述,赵楚军.温度和电压对双层有机发光二极管复合效率的影响[J].光谱学与光谱分析,2004,24(1):12-14.
作者姓名:许雪梅  彭景翠  李宏建  瞿述  赵楚军
作者单位:1.湖南大学应用物理系,湖南 长沙 410082
2.中南大学物理科学与技术学院,湖南 长沙 410083
基金项目:湖南省国家自然科学基金 (批准号 :98JJY2 0 4 7)资助项目
摘    要:提出了双层有机电致发光二极管ITO/PPV/PBD/Ca复合的理论模型。计算并讨论了温度和电压对其复合效率的影响:在电压为6~7.5 V时,复合效率随温度变化出现两个峰值,但随着电压升高,两峰值相互靠拢,当电压达到9 V时,峰值位置重叠,我们认为这一现象除了浅缺陷能级和深缺陷能级贡献的结果以外,还由于复合区域发生变化引起的。该模型较好地解释了有关实验现象。

关 键 词:有机发光二极管  复合效率  缺陷能级  复合区域  
文章编号:1000-0593(2004)01-0012-03
收稿时间:2002-08-30
修稿时间:2002年8月30日

Effect of Temperature and Applied Voltage on the Recombination Efficiency in Double Layer Organic Light Emitting Diodes
XU Xue-mei ,PENG Jing-cui ,LI Hong-jian ,QU Shu ,ZHAO Chu-jun.Effect of Temperature and Applied Voltage on the Recombination Efficiency in Double Layer Organic Light Emitting Diodes[J].Spectroscopy and Spectral Analysis,2004,24(1):12-14.
Authors:XU Xue-mei    PENG Jing-cui  LI Hong-jian  QU Shu  ZHAO Chu-jun
Institution:1. Department of Applied Physics, Hunan University, Changsha 410082, China2. School of Physics Science and Technology, Central South University, Changsha 410083, China
Abstract:In this paper, the theoretical model of recombination was presented and the effect of temperature and applied voltage on the recombination efficiency was investigated in double layer organic light-emitting diodes: ITO/PPV/PBD/Ca. At lower applied voltage, two peaks have been observed in the curve of recombination efficiency vs. temperature. With increasing voltage, the two peaks shifted toward each other, and at voltage around 9 V the two peaks converged. These phenomena were attributed to the excited deep and shallow trap levels and the change of recombination zone. In the Frenkel exciton model,the temperature dependence of the quantum efficiency depended on the carriers mobilities and carriers densities.The carriers mobilities increased with decreasing temperature, while the carriers densities decreased with decreasing temperature. Therefore, a peak in the curve of quantum efficiency vs. temperature was expected in the model. The high-temperature peak originated due to radiative recombination of the deep trap levels, but the low-temperature peak due to shallow ones. On the other hand, as the voltage increased, the recombination zone would be changed, which had some effects on the recombination efficiency. Some experiments proved our theoretical prediction.
Keywords:Organic light-emitting diodes  Recombination efficiency  Trap level  Recombination zone  
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《光谱学与光谱分析》浏览原始摘要信息
点击此处可从《光谱学与光谱分析》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号