In掺杂ZnO薄膜的制备及其特性研究

采用射频反应溅射技术在硅(100)衬底上制备了未掺杂和掺In的ZnO薄膜。掠角X射线衍射测试表明，实验中制备的掺In样品为ZnO薄膜。用X射线衍射仪、原子力显微镜和荧光分光光度计分别对两样品的结构、表面形貌和光致发光特性进行了表征，分析了In掺杂对ZnO薄膜的结构和发光特性的影响。与未掺杂ZnO薄膜相比，掺In ZnO薄膜具有高度的C轴择优取向，同时样品的晶格失配较小，与标准ZnO粉末样品之间的晶格失配仅为0．16％；掺In ZnO薄膜表面平滑，表面最大不平整度为7nm。在掺In样品的光致发光谱中观察到了波长位于415nm和433nm处强的蓝紫光双峰，对掺In样品的蓝紫双峰的发光机理进行了讨论，并推测出该蓝紫双峰来源于In替位杂质和Zn填隙杂质缺陷。

Preparation and Study of Properties of Indium-Doped ZnO Films on Si Substrates

Undoped and indium-doped zinc oxide films are deposited on Si substrates by radio frequency reactive sputtering technology. Glancing X-ray diffractometer (XRD) measurement indicated that In-doped sample is ZnO films. The structure, surfaces morphology and photoluminescent spectra of the sample are characterized by X-ray diffractometer, atomic force microscopy and fluorescent spectrophotometer, respectively. The effect of In-doping on the structure and photoluminescent properties of the films is analyzed. Compared with undoped ZnO film, In-doped ZnO film has highly c-axis oriented and the small lattice mismatch (0.16%). Surface of doped thin film is smooth and flat; the maximum roughness surface of sample is only 7nm. The blue-violet emission bi-peak locating at 415 nm and at 433 nm is observed in photoluminescence spectra of indium-doped ZnO films at room temperature. The mechanism of blue-violet emission bi-peak was discussed, and the blue-violet emission bi-peak is assigned to come from the In substitute impurity and Zn interstitial defects of ZnO.