MWECR CVD等离子体系统梯度磁场对沉积a-Si:H薄膜特性研究

分别研究了磁场线圈电流为115.2和137.7A以及137.7A并在加热台下加放SmCo永磁体的方法，来改变单磁场线圈分散场MWECR CVD系统等离子体室及沉积室磁场形貌.用洛伦兹拟合定量地得到了三种磁场形貌的磁场梯度.研究了磁场梯度对沉积a-Si:H薄膜性能的影响.研究表明：在衬底附近，高的磁场梯度可以获得高的沉积速率；在温度不很高时，高的磁场梯度可得到光敏性较好的a-Si:H薄膜. 关键词： 梯度磁场 洛伦兹拟合 a-Si:H薄膜 MWECR CVD系统

Investigation of a-Si:H film characteristics influenced by magnetic field gradient in MWECR CVD plasma system

In this paper the magnetic field profiles produced by coil currents of I=115.2A,I=137.7A and I=137.7A with a SmCo permanent magnet under the substrate holder in the deposition chamber and plasma chamber in the single-coil divergent field MWECR(micro-wave electron cyclotron resonance) CVD system was investigated. Then the magnetic field gradient of these magnetic field profiles was obtained quantitatively using Lorentz fit. The results indicated that the gradient value nearby the substrate, which was produced under the condition that the magnetic field profiles are produced by the coil current 137.7A with a SmCo permanent magnet under the substrate holder, is the largest, the larger one being produced by the coil current of 137.7A without the permanent magnet and the smallest one being produced by coil current of 115.2A. The effect of magnetic field gradient on characteristics of a-Si:H film has been also analyzed. It was found that high deposition rate was observed nearby the substrate with a high magnetic field gradient and that the better photosensitivity of a-Si:H film could be obtained at the lower substrate temperature when magnetic field gradient is high.